Oxford PlasmaLab System 100 ICP 300 Deep RIE(SiO2,SiNx and Deep Si Etching)

The Oxford Plasmalab System 100 DRIE is a reactive ion etch tool
 for etching silicon and silicon based materials such as (SiO2, SiNx ).

Key Features:

This system is dedicated to Si wafer and  SiO2, SiNx thin films etching

 
 

Equipment
  • RIE 240 mm fixed height Cryo-cooled/heated (-150-400oC) aluminium RF powerable lower electrode with fixed top plate, star lift, helium assisted heat transfer and water clamping
  • 300W, 13.56 MHz RF Generator & Air-vane capacitor Automatch Unit for RIE 240 mm electrode
  • ICP300 ICP source for use on Plasmalab 100 (3000W 2MHz)
  • Alcatel ATH1300MT corrosive compatible magnetic bearing turbomolecular pump
  • 8 line externally mounted gas pod (4MFC, 1 bypass MFC, 1 corrosive resistant MFC)
  • Rotary Pump (Roughing and Load Lock Roughing)
  • Julabo FP51-SL 400V 50 Hz 3PH HTR/CHILLER -30/80oC


Process:
  • typical process pressure: 5 - 150 mtorr
  • plasma density: ca 1 - 5 x 109 / cm2
  • standard method for most applications
  • RF ("self") bias forms at the substrate electrode
  • Ion Energy (~ RF bias) dependent on the RF power and process pressure
  • energy range process dependent: 30 eV - 1.000 eV
  • end point detection: optical emission, laser interferometry
     

SUNUM building, Class 1000 Clean Room for Nanofabrication Lab (G131-G145)

For detailed information including Operation Conditions and Service Fees please contact: sunum@sabanciuniv.edu

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