Oxford PlasmaLab System 100 ICP 300 Deep RIE(SiO2,SiNx and Deep Si Etching)

Micro/Nano Fabrication (Clean Room) Laboratory

Reservation

The Oxford Plasmalab System 100 DRIE is a reactive ion etch tool for etching silicon and silicon based materials such as (SiO2, SiNx ).

Key Features:

• This system is dedicated to Si wafer and SiO2, SiNx thin films etching Equipment
• RIE 240 mm fixed height Cryo-cooled/heated (-150-400oC) aluminium RF powerable lower electrode with fixed top plate, star lift, helium assisted heat transfer and water clamping
• 300W, 13.56 MHz RF Generator & Air-vane capacitor Automatch Unit for RIE 240 mm electrode
• ICP300 ICP source for use on Plasmalab 100 (3000W 2MHz)
• Alcatel ATH1300MT corrosive compatible magnetic bearing turbomolecular pump
• 8 line externally mounted gas pod (4MFC, 1 bypass MFC, 1 corrosive resistant MFC)
• Rotary Pump (Roughing and Load Lock Roughing)
• Julabo FP51-SL 400V 50 Hz 3PH HTR/CHILLER -30/80oC

Process:
• typical process pressure: 5 - 150 mtorr
• plasma density: ca 1 - 5 x 109 / cm2
• standard method for most applications
• RF ("self") bias forms at the substrate electrode
• Ion Energy (~ RF bias) dependent on the RF power and process pressure
• energy range process dependent: 30 eV - 1.000 eV
• end point detection: optical emission, laser interferometry

Standart Operating Procedure for OXFORD Plasma Systems 

Location

SUNUM building, Class 1000 Clean Room for Nanofabrication Lab (G131-G145)

For detailed information including Operation Conditions and Service Fees please contact: Onur Serbest : oserbest@sabanciuniv.edu

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